A new plant for the production of microelectronics has been created in Russia

The Scientific Research Institute of Precision Engineering (NIITM, part of the Element Group of Companies) has created a prototype of the country's first installation for plasma chemical deposition (PHO) on silicon wafers with a diameter of 300 mm.

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According to the developers, PHO is one of the basic processes in the production of microcircuits. Until recently, such machines were purchased abroad. Domestic installations will help to strengthen the technological sovereignty of the country. In addition, for states that are interested in developing microelectronics, Russian manufacturers can become alternative suppliers of equipment.

"The new complex is designed for processing silicon wafers with a diameter of 300 mm with the possibility of changing the configuration to work with wafers of 200 mm. This makes it possible to test the operation of the plant in production facilities, taking into account the existing 200-millimeter technological processes and ensure timely preparation for the transition to work on 300-millimeter plates," Georgy Yeritsyan, head of the Advanced Research and Development Department at NIITM, told Izvestia.

He noted that the developers managed to localize the production of components in a short period of time. At the same time, the basic technological processes created within the framework of the project are not inferior to imported analogues.

Read more in the exclusive Izvestia article:

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