The Russian Federation has created an installation for the production of semiconductor crystals

Russia has created the first domestic facility for producing gallium nitride crystals on 200-mm silicon substrates. Specialists from NIITM JSC (part of Element Group), NTC Microelectronics RAS (St. Petersburg) and Soft-Impact LLC took part in the development.

According to the scientists, the development will make it possible to localize one of the important stages in the production of power and ultra-high-frequency microelectronics. Such devices, in particular, include chargers for both household appliances (phones, speakers, laptops, etc.) and large industrial equipment (electric cars, machine tools, drones, etc.).

"The characteristics of gallium nitride allow it to be used as part of the most powerful devices. For example, in control microelectronics for fast charging stations. Due to the durability of the obtained components, energy replenishment is faster than with the help of modern technologies," Yulia Sukhoroslova, Director of Electronic Engineering at Element Group of Companies, told Izvestia.

She noted that at present the market of gallium nitride components is only being formed, but its prospects can be compared with the scale of silicon electronics turnover.

Read more in the exclusive material of Izvestia:

Basic substance: the Russian Federation has created a machine for growth of semiconductor crystals